Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2

Ishihara, R.; van Dijk, BD; van der Wilt, PC; Metselaar, JW; Beenakker, C.I.M.; Hiroshima, Y; Abe, D; Higashi, S; Inoue, S; Shimoda, T

Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2

Conference paper (2002)

Authors

R. Ishihara Electronic Components, Technology and Materials -

BD van Dijk Electronic Components, Technology and Materials -

PC van der Wilt Electronic Components, Technology and Materials -

JW Metselaar Electronic Components, Technology and Materials -

C.I.M. Beenakker Electronic Components, Technology and Materials -

Y Hiroshima External organisation

D Abe External organisation

S Higashi External organisation

S Inoue External organisation

T Shimoda External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2002

Language

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials