Room temperature GaAsSb array photodetectors

Li, Ziyuan; Trendafilov, Simeon; Allen, Monica T.; Allen, Jeffery; Alabadla, Ahmed; Gao, Qian; Yuan, Xiaoming; Caroff-Gaonac'h, Philippe; Tan, Hark Hoe; More Authors, undefined More Authors

Room temperature GaAsSb array photodetectors

Conference paper (2018)

Authors

Ziyuan Li Australian National University

Simeon Trendafilov Munitions Directorate

Monica T. Allen Munitions Directorate

Jeffery Allen Munitions Directorate

Ahmed Alabadla Australian National University

Qian Gao Australian National University

Xiaoming Yuan Australian National University, Central South University China

Philippe Caroff-Gaonac'h QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Microsoft Quantum Lab Delft, Australian National University

Hark Hoe Tan Australian National University

More Authors... External organisation

Research Group

QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)

VLS Nanowire Photodetector GaAsSb III-V semiconductor

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http://resolver.tudelft.nl/uuid:fcad01cb-86c9-48cd-a1e3-44c510d39dde

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Published Date

2018

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

GaAsSb nanowire arrays were grown by gold-seeded metalorganic vapor phase epitaxy (MOVPE) and fabricated into photodetector devices. The array photodetectors operate at room temperature with tunable resonance peaks varying with the array geometry. These devices are promising for multispectral photodetector applications.