Diode reverse recovery analysis of Cockcroft-Walton voltage multiplier for high voltage generation

Abstract

Cockcroft-Walton voltage multiplier circuit is widely used for high voltage generation circuit. The diode reverse recovery effect of Cockcroft-Walton voltage multiplier circuit is investigated by analysis and circuit simulation. According to the analysis and circuit simulation study, it can be concluded that the multiplier diode reverse recovery problem is mainly caused by the diodes in the first stage voltage multiplier. The most effective and economic way to alleviate the diode reverse recovery problem is employing diodes with good reverse recovery performance such as silicon carbide Schottky diodes only in the first stage for good system performance. The experimental results of 3 stages Cockcroft-Walton voltage multiplier circuit hardware prototype operating at 300kHz switching frequency validate the concept based on analysis and simulation study. The silicon carbide diode without reverse recovery needs to be used only in the first stage of voltage multiplier circuit to effectively mitigate the reverse recovery problems in high frequency operations with good circuit performance.