A Linearization Technique for Bipolar Amplifiers based on Derivative Superposition

D'Avino, M.; van der Meulen, J.M.M.; Malotaux, E.S.; Pelk, M.J.; de Vreede, L.C.N.; Groenewegen, M.W.A; Mattheijssen, P.; van der Heijden, M.P.

A Linearization Technique for Bipolar Amplifiers based on Derivative Superposition

Conference paper (2017)

Authors

M. D'Avino External organisation

J.M.M. van der Meulen Electronics -

E.S. Malotaux Electronics -

M.J. Pelk Electronics -

L.C.N. de Vreede Electronics -

M.W.A Groenewegen NXP Semiconductors

P. Mattheijssen NXP Semiconductors

M.P. van der Heijden NXP Semiconductors

Research Group

Electronics () (TU Delft)

Linearity Bipolar transistors Intermodulation distortion Power amplifiers

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http://resolver.tudelft.nl/uuid:efdc2d54-17ae-4e1c-bf82-ac6f5ceda378

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Published Date

2017

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

A linearization technique for bipolar amplifiers based on Derivative
Superposition is presented. The proposed technique provides excellent
linearity, while having low sensitivity on the bias conditions. A
demonstrator circuit, along with a reference circuit using out-of-band
linearization for linearity comparison, have been designed and
implemented in a 0:25μm SiGe:C BiCMOS technology to show the
effectiveness of the proposed approach. Measured results show a
significant IM3 improvement up to compression compared to the reference
circuit.

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