A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS

Conference paper (2017)

Authors

Long Xu Electronic Instrumentation - EEMCS
J.H. Huijsing Electronic Instrumentation - EEMCS
Kofi A.A. Makinwa Microelectronics
Research Group
Electronic Instrumentation (EEMCS) (TU Delft)
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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

This paper presents an NPN-based temperature sensor intended for the temperature compensation of the metal shunt resistor of an integrated current sensing system. The sensor was implemented in a 0.18 HV BCD CMOS technology and occupies 0.16mm2 After a one-point trim, its inaccuracy is less than ±0.4°C over the industrial temperature range (-40°C to 85°C). It also achieves 14.8niK resolution in a 7ms conversion time while consuming 12μm. This results in a resolution FOM of 18.4pJ·K2 the lowest ever reported for an NPN-based sensor.

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