Measurement of the resonant-polaron effect in the reststrahlen band of GaAs:Si using two-photon excitation

Planken, P.C.M.; Pellemans, HPM; Langerak, CJGM; van Son, PC; Hovenier, J.N.; Klaassen, TO; Wenckebach, WT; Barmby, PW; Dunn, JL; Bates, CA; Foxon, CT

Measurement of the resonant-polaron effect in the reststrahlen band of GaAs:Si using two-photon excitation

Journal article (1996)

Authors

P.C.M. Planken Old - sect Terahertz Imaging (IST/TI)

HPM Pellemans Old organisation TN/TechnischeNatuurkunde voorm

CJGM Langerak External organisation

PC van Son Old organisation TN/TechnischeNatuurkunde voorm

J.N. Hovenier Old - sect Terahertz Imaging (IST/TI)

TO Klaassen Old - sect Terahertz Imaging (IST/TI)

WT Wenckebach Old - sect Terahertz Imaging (IST/TI)

PW Barmby External organisation

JL Dunn External organisation

CA Bates External organisation

CT Foxon External organisation

Research Group

Old - sect Terahertz Imaging (IST/TI)

To reference this document use:

http://resolver.tudelft.nl/uuid:dc59a684-63e7-4c75-97c6-e5521eefe6c5

More Info

expand_more

Published Date

1996

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Old - sect Terahertz Imaging (IST/TI)