Thermal quenching of Eu2+ emission in Ca- and Sr-Ga2S4 in relation with VRBE schemes

Journal article (2016)

Authors

A.P. Dobrowolska Wroclaw University of Economics and Business, RST/Fundamental Aspects of Materials and Energy - AS
B.F.P.R. Dierre RST/Fundamental Aspects of Materials and Energy - AS
C.M. Fang Brunel University
H.T.J.M. Hintzen RST/Fundamental Aspects of Materials and Energy - AS
P. Dorenbos RST/Fundamental Aspects of Materials and Energy - AS
Research Group
RST/Fundamental Aspects of Materials and Energy (AS) (TU Delft)
Copyright: © 2016 A.P. Dobrowolska, B.F.P.R. Dierre, C.M. Fang, H.T.J.M. Hintzen, P. Dorenbos
DOI: https://doi.org/10.1016/j.jlumin.2016.12.022
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Published Date

27-12-2016

Language

English

Faculty

Applied Sciences

Department

RST/Radiation, Science and Technology

Research Group

RST/Fundamental Aspects of Materials and Energy

Abstract

Structural and optical properties of MGa2S4 (M = Mg, Zn, Ca, Sr, Ba) compounds have been compared, and the vacuum referred binding energy (VRBE) schemes were constructed for the lanthanide ions in the iso-structural compounds CaGa2S4 and SrGa2S4 employing literature data. The VRBE of an electron in the 5d excited state of Eu2+ was found at 0.75 and 0.97 eV below the bottom of the conduction band (CB) in CaGa2S4:Eu and SrGa2S4:Eu, respectively. Such differences explains the unexpected higher thermal quenching temperature reported for Eu2+-doped SrGa2S4 (T50% = ∼475 K) compared to Eu2+-doped CaGa2S4 (T50% = 400 K) The significantly lower VRBE at the CB-bottom in CaGa2S4 versus SrGa2S4 may be explained by the shorter Ga-S bond lengths in SrGa2S4.

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