High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process

Golshani, N.; Derakhshandeh Kheljani, J.; Ishihara, R.; Beenakker, C.I.M.

High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process

Journal article (2010)

Authors

N. Golshani Electronic Components, Technology and Materials

J. Derakhshandeh Kheljani Electronic Components, Technology and Materials

R. Ishihara Electronic Components, Technology and Materials

C.I.M. Beenakker Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2010

Language

English

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Research Group

Electronic Components, Technology and Materials

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