Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

Tao, C; Ishihara, R; Metselaar, W; Beenakker, C.I.M.; Wu, M.

Location and crystallographic orientation control of Si grains through combined metal induced lateral crystalization and mu-Czochralski process

Conference paper (2008)

Authors

C Tao External organisation

R Ishihara Electronic Components, Technology and Materials

W Metselaar External organisation

C.I.M. Beenakker Electronic Components, Technology and Materials

M. Wu

Research Group

Electronic Components, Technology and Materials

To reference this document use:

http://resolver.tudelft.nl/uuid:d82eddd0-5153-40da-9552-eb011e9ca58d

More Info

expand_more

Published Date

2008

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Electronic Components, Technology and Materials