Memristor Device Modeling

Abunahla, Heba; Mohammad, Baker

Memristor Device Modeling

Book chapter (2018)

Authors

Heba Abunahla Khalifa University

Baker Mohammad Khalifa University

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Temperature Poisson Memristor Vacancy Profile Potential Switching Parameter Voltage Thickness VCM Boltzmann Oxide

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Published Date

2018

Language

English

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Abstract

This chapter presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB-based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device. The value of this contribution is to provide a framework intended to simulate anionic memristor devices using correlated mathematical models. In addition, the model can be used to explore device materials and predict its performance.

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