Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer

Journal article (2013)

Authors

M.P. Westig QN/Fysics of NanoElectronics
S Selig External organisation
K. Jacobs External organisation
T.M. Klapwijk QN/Fysics of NanoElectronics
CE Honingh External organisation
Research Group
QN/Fysics of NanoElectronics
More Info
expand_more

Published Date

2013

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Fysics of NanoElectronics