Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

Journal article (2017)

Authors

Maciej Stodolny ECN Solar Energy
John Anker ECN Solar Energy
Jan Marc Luchies Tempress Systems
Wilhelmus M.M. Kessels Eindhoven University of Technology
I.G. Romijn ECN Solar Energy
Bart L.J. Geerligs ECN Solar Energy
G.J.M. Janssen ECN Solar Energy
Bas Van de Loo Eindhoven University of Technology
J. Melskens Eindhoven University of Technology
R. Santbergen Photovoltaic Materials and Devices - EEMCS
O. Isabella Photovoltaic Materials and Devices - EEMCS
Jurriaan Schmitz University of Twente
Martijn Lenes Tempress Systems
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2017 Maciej K. Stodolny, John Anker, Bart L.J. Geerligs, G.J.M. Janssen, Bas W.H. Van De Loo, J. Melskens, R. Santbergen, O. Isabella, Jurriaan Schmitz, Martijn Lenes, Jan Marc Luchies, Wilhelmus M.M. Kessels, I.G. Romijn
DOI: https://doi.org/10.1016/j.egypro.2017.09.250
More Info
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Published Date

2017

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.