A novel selected area laser assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Ishihara, R.; Glazer, MP; Metselaar, JW; Beenakker, C.I.M.; Stolyarova, S; Nemirovsky, Y; Raab, Y; Rusian, P; Dorfan, M; Lavi, B; Leizerson, I; Kishnevsky, A; van Aandel, Y; Cao, XQ

A novel selected area laser assisted (SALA) system for crystallization and doping processes in low-temperature poly-Si thin-film transistors

Conference paper (2005)

Authors

R. Ishihara Electronic Components, Technology and Materials -

MP Glazer Energy Technology - Mechanical, Maritime and Materials Engineering

JW Metselaar Electronic Components, Technology and Materials -

C.I.M. Beenakker Electronic Components, Technology and Materials -

S Stolyarova External organisation

Y Nemirovsky External organisation

Y Raab External organisation

P Rusian External organisation

M Dorfan External organisation

B Lavi External organisation

I Leizerson External organisation

A Kishnevsky External organisation

Y van Aandel External organisation

XQ Cao External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2005

Language

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials