Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Kabaoǧlu, Aykut; Solmaz, Nergiz Sahin; İlik, Sadik; Uzun, Yasemin; Yelten, Mustafa Berke

Statistical MOSFET Modeling Methodology for Cryogenic Conditions

Journal article (2019)

Authors

Aykut Kabaoǧlu Istanbul Technical University

Nergiz Sahin Solmaz Istanbul Technical University

Sadik İlik Istanbul Technical University

Yasemin Uzun Istanbul Technical University

Mustafa Berke Yelten Istanbul Technical University

Affiliation

External organisation

Low temperature Statistical modeling Cryogenic BSIM modeling Cryogenic variation Device modeling MOSFET modeling

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Published Date

2019

Language

English

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Abstract

Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate I_D-V_GS and I_D-V_DS curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions.