Test and Reliability of Emerging Non-Volatile Memories

Conference paper (2017)

Authors

S. Hamdioui Computer Engineering - EEMCS
P. Pouyan Computer Engineering - EEMCS
Huawei Li Chinese Academy of Sciences
Ying Wang Chinese Academy of Sciences
Arijit Raychowdhur Georgia Institute of Technology
Insik Yoon Georgia Institute of Technology
Research Group
Computer Engineering (EEMCS) (TU Delft)
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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Quantum & Computer Engineering

Research Group

Computer Engineering

Abstract

The search for alternative memory technologies has attracted significant attention toward emerging non-volatile memories. Among them, STT-MRAM, PCM, RRAM have shown promising characteristic to gain a position inside the memory hierarchy of computing platforms, and even enable new computing paradigms. However like any other emerging technology these devices are affected by concerns to be resolved before they could become a mainstream. This paper reviews the main reliability and testability challenges of aforementioned emerging non-volatile memories and highlights the main future considerations toward them.

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