Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Stassen, AF; de Boer, RWI; Iossad, N; Morpurgo, AF

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Journal article (2004)

Authors

AF Stassen QN/Fysics of NanoElectronics

RWI de Boer QN/Fysics of NanoElectronics

N Iossad QN/Fysics of NanoElectronics

AF Morpurgo QN/Fysics of NanoElectronics

Research Group

QN/Fysics of NanoElectronics

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Published Date

2004

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Research Group

QN/Fysics of NanoElectronics

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