A Comparative Analysis of the Junction Formation Mechanisms of the Boron on Silicon Junction

Fang, Piet Xiaowen; Nihtianova, S.

A Comparative Analysis of the Junction Formation Mechanisms of the Boron on Silicon Junction

Conference paper (2024)

Authors

Piet Xiaowen Fang

S. Nihtianova Electronic Instrumentation -

Research Group

Electronic Instrumentation () (TU Delft)

P-n junction Heterojunction First-principles Barrier height Charge-transfer junction model Schottky-Mott theory

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Published Date

2024

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

Photodiodes based on the Boron on Silicon junction (B-Si) show excellent responsivity to DUV and VUV photons, radiation hardness, and impressive electrical characteristics. However, the proposed models describing the junction formation mechanism do not sufficiently predict the junction's properties. We analyze two previously proposed models: the ultra-shallow p-n junction model and the charge transfer heterojunction model. We additionally apply the Schottky-Mott theory, a semiconductor-metal heterojunction model. Both the commonalities and incompatibilities between these models are discussed.

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