Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Rubio, Antonio; Escudero, Manuel; Pouyan, P.

Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Conference paper (2017)

Authors

Antonio Rubio Universitat Politecnica de Catalunya

Manuel Escudero Universitat Politecnica de Catalunya

P. Pouyan Computer Engineering

Research Group

Computer Engineering

Variability Aging RRAM devices Ternary memories Endurance Adaptive mechanisms

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Published Date

2017

Language

English

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Research Group

Computer Engineering

Abstract

Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

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