Towards a general concentration quenching model of Bi3+ luminescence

Journal article (2017)

Authors

R.H.P. Awater RST/Fundamental Aspects of Materials and Energy - AS
P. Dorenbos RST/Fundamental Aspects of Materials and Energy - AS
Research Group
RST/Fundamental Aspects of Materials and Energy (AS) (TU Delft)
More Info
expand_more

Published Date

2017

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Applied Sciences

Department

RST/Radiation, Science and Technology

Research Group

RST/Fundamental Aspects of Materials and Energy

Abstract

The vacuum referred binding energy of the electron in the Bi2+ ground state has been determined in 15 different compounds. This shows that the electron binding energy in the ground state of Bi2+ is at lower (more negative) energy compared to the electron binding energy in the excited state of Bi3+. This means that electron transfer from the excited state of one Bi3+ to a neighboring Bi3+, forming a Bi2+−Bi4+ pair, acts as a quenching route for the Bi3+ emission. Electron back transfer in the Bi2+−Bi4+ pair is then suggested to be the origin for the frequently observed pair emission. This paper shows that vacuum referred electron binding energy diagrams can provide a unique physical insight in the properties of inorganic compounds.

Files

1_s2.0_S0022231317304830_main.... (pdf)
(pdf | 0.294 Mb)

Download not available