Al in ZnO - From doping to alloying: An investigation of Al electrical activation in relation to structure and charge transport limits

Journal article (2016)

Authors

S. Cornelius ChemE/Materials for Energy Conversion and Storage - , Helmholtz-Zentrum Berlin

Mykola Vinnichenko Fraunhofer-Institut für Keramische Technologien und Systeme IKTS

Research Group

ChemE/Materials for Energy Conversion and Storage () (TU Delft)

Mobility Doping Charge transport Sputtering Activation Magnetron Transparent conductive oxide Zinc oxide

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Published Date

30-04-2016

Language

English

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Materials for Energy Conversion and Storage

Abstract

The electrical activation of Al in ZnO thin films grown by pulsed reactive magnetron sputtering is quantified experimentally for awide range of Al concentrations. Wefind that the activation does not exceed 35% remaining constant for growth temperatures below a certain optimumvalue atwhich the highest free electron density and mobility are achieved. Above this temperature, the Al activation decreases rapidly,while Al is accumulating in the films and their micro-structure as well as electrical properties deteriorate significantly. The analysis of possible mechanisms of Al deactivation suggests that the observed effects may be explained only by considering Al doped ZnO as metastable solid solution showing a tendency to segregation of Al into secondary phases.