Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

Journal article (2016)

Authors

V. Mohammadi Electronic Instrumentation -

S. Nihtianova Electronic Instrumentation -

Research Group

Electronic Instrumentation () (TU Delft)

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Published Date

2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Instrumentation

Abstract

The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A LB = 2.2 mm was determined for boron deposition at 700 °C, while a LB of less than 1 mm was observed at temperatures lower than 500 °C.