Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Hamers, EAG; Smets, AHM; Smit, C; Hoefnagels, JPM; Kessels, WMM; van de Sanden, MCM

Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Conference paper (2001)

Authors

EAG Hamers External organisation

AHM Smets External organisation

C Smit Electronic Components, Technology and Materials -

JPM Hoefnagels External organisation

WMM Kessels External organisation

MCM van de Sanden External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Elektrotechniek Techniek

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http://resolver.tudelft.nl/uuid:61eb1160-b7c0-477d-9fa4-1d571dc28711

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Published Date

2001

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials