Importance of defect density near the p-i interface for a-Si:H solar cell performance

Korevaar, BA; Smit, C; van Swaaij, R.A.C.M.M.; Schram, DC; van de Sanden, MCM

Importance of defect density near the p-i interface for a-Si:H solar cell performance

Conference paper (2001)

Authors

BA Korevaar Electronic Components, Technology and Materials -

C Smit Electronic Components, Technology and Materials -

R.A.C.M.M. van Swaaij Electronic Components, Technology and Materials -

DC Schram External organisation

MCM van de Sanden External organisation

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Elektrotechniek Techniek

To reference this document use:

http://resolver.tudelft.nl/uuid:601544c1-2c83-46b0-a0c5-96ad8307d734

More Info

expand_more

Published Date

2001

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials