Perovskite thin films via atomic layer deposition

Journal article (2015)

Authors

Brandon R. Sutherland University of Toronto
Sjoerd Hoogland University of Toronto
Edward H. Sargent University of Toronto
Michael M. Adachi University of Toronto
Pongsakorn Kanjanaboos University of Toronto
Chris T O Wong University of Toronto
Jeffrey J. McDowell University of Toronto
Jixian Xu University of Toronto
Oleksandr Voznyy University of Toronto
Zhijun Ning University of Toronto
A.J. Houtepen ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
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Published Date

07-01-2015

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

(Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.