P-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Ullah, A. R.; Meyer, F.M.; Gluschke, Jan G.; Naureen, S.; Caroff-Gaonac'h, P.; Krogstrup, P.; Nygård, Jesper; Micolich, Adam P.

P-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Journal article (2018)

Authors

A. R. Ullah University of New South Wales

F.M. Meyer University of New South Wales

Jan G. Gluschke University of New South Wales

S. Naureen IRnova AB, Kista, Australian National University

P. Caroff-Gaonac'h Microsoft Quantum Lab Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre

P. Krogstrup University of Copenhagen

Jesper Nygård University of Copenhagen

Adam P. Micolich University of New South Wales

Research Group

QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)

Nanowire Transistor MESFET P-GaAs Schottky gate

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Published Date

2018

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical subthreshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio ∼10⁵, on-resistance ∼700 kω, contact resistance ∼30 kω, peak transconductance 1.2 μS/μm, and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates while leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.