Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Lansbergen, GP; Rahman, R; Wellard, CJ; Woo, I; Caro, J.; Collaert, N; Biesemans, S; Klimeck, G; Hollenberg, L.C.L; Rogge, S.

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Journal article (2008)

Authors

GP Lansbergen QN/Fysics of NanoElectronics

R Rahman Data-Intensive Systems -

CJ Wellard External organisation

I Woo External organisation

J. Caro QN/Photronic Devices

N Collaert External organisation

S Biesemans External organisation

G Klimeck External organisation

L.C.L Hollenberg External organisation

S. Rogge QN/Photronic Devices

Research Group

QN/Fysics of NanoElectronics

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Published Date

2008

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Research Group

QN/Fysics of NanoElectronics