Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Journal article (2008)

Authors

GP Lansbergen QN/Fysics of NanoElectronics
R Rahman Data-Intensive Systems - EEMCS
CJ Wellard External organisation
I Woo External organisation
J. Caro QN/Photronic Devices
N Collaert External organisation
S Biesemans External organisation
G Klimeck External organisation
L.C.L Hollenberg External organisation
S. Rogge QN/Photronic Devices
Research Group
QN/Fysics of NanoElectronics
More Info
expand_more

Published Date

2008

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Fysics of NanoElectronics