A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

Conference paper (2019)

Authors

Saijun Mao Leadrive Technology (Shanghai) Co. Ltd.
Zhilei Yao Yancheng Institute of Technology
Deming Zhu 14th Research Institute of China Electronic Technology Group Corporation
Jelena Popovic Klimop Energy
Jan Abraham Ferreira Electrical Sustainable Energy
Department
Electrical Sustainable Energy
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Published Date

01-09-2019

Language

English

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Department

Electrical Sustainable Energy

Abstract

A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.

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