Temperature dependence of hole transport properties through physically defined silicon quantum dots

Journal article (2020)

Authors

N. Shimatani Tokyo Institute of Technology
Y. Yamaoka Tokyo Institute of Technology
R. Ishihara QuTech Advanced Research Centre, QID/Ishihara Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft, Quantum Integration Technology , Tokyo Institute of Technology
A. Andreev Hitachi Cambridge Laboratory, A-Modelling Solutions Ltd
D.A. Williams Cavendish Laboratory
S. Oda Tokyo Institute of Technology
T. Kodera Tokyo Institute of Technology
Research Group
QID/Ishihara Lab (QuTech Advanced Research Centre) (TU Delft)
More Info
expand_more

Published Date

2020

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

QuTech Advanced Research Centre

Department

Quantum Internet Division

Research Group

QID/Ishihara Lab

Abstract

For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on silicon-on-insulator for strong confinement of holes and investigate the temperature dependence of Coulomb oscillations and Coulomb diamonds. The physically defined Si QDs show clear Coulomb diamonds at temperatures up to 25 K, much higher than for gate defined QDs. To verify the temperature dependence of Coulomb diamonds, we carry out simulations and find good agreement with the experiment. The results suggest a possibility for realizing quantum computing chips with qubits integrated with CMOS electronics operating at higher temperature in the future.

Files

5.0010981.pdf
(pdf | 1.41 Mb)
Unknown license

Download not available