Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Conference paper (2022)

Authors

G. Yu DC systems, Energy conversion & Storage - EEMCS
Thiago B. Soeiro DC systems, Energy conversion & Storage - EEMCS
J. Dong DC systems, Energy conversion & Storage - EEMCS
P. Bauer DC systems, Energy conversion & Storage - EEMCS
Research Group
DC systems, Energy conversion & Storage (EEMCS) (TU Delft)
Copyright: © 2022 G. Yu, Thiago B. Soeiro, J. Dong, P. Bauer
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Published Date

2022

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

DC systems, Energy conversion & Storage

Abstract

This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

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