Influence of trap states on dynamic properties of single grain silicon thin film transistors

Journal article (2006)

Authors

Feng Yan External organisation
P Migliorato External organisation
R. Ishihara Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2006

Language

Undefined/Unknown

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials