High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

Vikas, R; Ishihara, R.; Hiroshima, Y; Abe, D; Inoue, S; Shimoda, T; Metselaar, JW; Beenakker, C. W J

High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

Conference paper (2005)

Authors

R Vikas External organisation

R. Ishihara Electronic Components, Technology and Materials

Y Hiroshima External organisation

D Abe External organisation

S Inoue External organisation

T Shimoda External organisation

JW Metselaar Electronic Components, Technology and Materials

C. W J Beenakker Electronic Components, Technology and Materials

Research Group

Electronic Components, Technology and Materials

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Published Date

2005

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Research Group

Electronic Components, Technology and Materials

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