SOI Induced Exchange Anisotropy In Germanium Bilayers

Bachelor thesis (2024)

Authors

E.C.A. Lemmens Sjöstrand Applied Sciences

Contributors

S. Bosco QCD/Bosco Group - QuTech Advanced Research Centre (mentor)
Menno Veldhorst QN/Veldhorst Lab - AS (graduation committee member)
A. Chatterjee QRD/Chatterjee Lab - QuTech Advanced Research Centre (graduation committee member)
Faculty
Applied Sciences
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Published Date

12-07-2024

Language

English

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Faculty

Applied Sciences

Abstract

Germanium heterostructures are frontrunners for semiconducting quantum information processing.
State-of-the-art double quantum dots are confined in monolayers of Germanium, however recent technological advances enable double quantum dots to be confined vertically in germanium bilayers, offering the opportunity to add the vertical degree of freedom to the qubit architecture.
This project consists in theoretically modelling the double quantum dot in a Germanium bilayer by finding an effective Hamiltonian of two interacting spins in the presence of spin-orbit interactions.
By analyzing the anisotropy of the Landé g-factors in the double quantum dot, the project aims to identify opportunities and challenges for two-qubit gates implemented in these structures.

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