Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)

Journal article (2021)

Authors

Vahid Mohammadi Electronic Instrumentation
S. Nihtianov Electronic Instrumentation
C.M. Fang Brunel University London,
Research Group
Electronic Instrumentation
Copyright: © 2021 V. Mohammadi, S. Nihtianova, C. Fang
DOI: https://doi.org/10.1038/s41598-021-99821-9
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Published Date

2021

Language

English

Research Group

Electronic Instrumentation

Abstract