Degradation of Diode Junction Characteristics due to Residual Defects Caused by Laser-Annealed Implantations Studied by Bipolar Test Structures

Conference paper (2006)

Authors

V Gonda Electronic Components, Technology and Materials - EEMCS
T.L.M. Scholtes Electronic Components, Technology and Materials - EEMCS
L.K. Nanver Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2006

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials