We report the magnetic domain structure, and electrical and magnetoresistance properties of laser ablated Co₄₀Fe₄₀B₂₀ (CoFeB) (6 to 36 nm) thin films deposited on SiO₂ / Si(001) substrates. Magnetic force microscopy performed on annealed CoFeB thin films revealed larger magnetic domains, which are formed due to strong exchange coupling between the grains. The temperature-dependent sheet resistance of as-deposited thin films revealed that the observed non-metallic behavior is due to intragrain-tunneling and SiO₂ inclusions in the amorphous matrix. The metallic behavior of annealed CoFeB thin films is due to electron scattering from grain boundaries and granularity correlated to the formation of nano-crystallites. Thickness and field-dependent magneto-transport studies show higher magnetoresistance values for thinner annealed CoFeB films due to more scattering events upon crystallization, which is consistent with the granular nature of the annealed thin films.