Solution-processed polycrystalline silicon on paper

Solution-processed polycrystalline silicon on paper

Trifunovic, M.
Shimoda, T.
Ishihara, R.

Electrical Engineering, Mathematics and Computer Science

Microelectronics

2015-04-21

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150?°C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

silicon
amorphous semiconductors
excimer lasers
thin film transistors
elemental semiconductors

http://resolver.tudelft.nl/uuid:76f41b21-766c-4309-bea2-d6e1c66aff02

American Institute of Physics

003-6951

https://doi.org/10.1063/1.4916998

Applied Physics Letters, 106 (16), 2014

Institutional Repository

journal article

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