Print Email Facebook Twitter Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile Title Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile Author Liu, Ke (Southern University of Science and Technology) Tan, C. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology) Li, Shizhen (Southern University of Science and Technology) Yuan, Wucheng (Southern University of Science and Technology) Liu, X. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) French, P.J. (TU Delft Bio-Electronics) Ye, H. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology) Wang, S. (TU Delft Bio-Electronics; Southern University of Science and Technology) Date 2023 Abstract This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios. Subject superjunctionMOSFETdoping profilereverse recoverybody diode To reference this document use: http://resolver.tudelft.nl/uuid:6fab90fe-c63b-4628-b435-9e634a4ffa62 DOI https://doi.org/10.3390/electronics12132977 ISSN 2079-9292 Source Electronics (Switzerland), 12 (13) Part of collection Institutional Repository Document type journal article Rights © 2023 Ke Liu, C. Tan, Shizhen Li, Wucheng Yuan, X. Liu, Kouchi Zhang, P.J. French, H. Ye, S. Wang Files PDF electronics_12_02977.pdf 9.7 MB Close viewer /islandora/object/uuid:6fab90fe-c63b-4628-b435-9e634a4ffa62/datastream/OBJ/view